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| UNISONIC TECHNOLOGIES CO., LTD DTC143T NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. NPN SILICON TRANSISTOR 3 2 3 1 SOT-23 EQUIVALENT CIRCUIT R1 C 2 3 1 SOT-323 B E 2 1 SOT-523 * Pb-free plating product number: DTC143TL ORDERING INFORMATION Order Number Normal Lead Free Plating DTC143T-AE3-R DTC143TL-AE3-R DTC143T-AL3-R DTC143TL-AL3-R DTC143T-AN3-R DTC143TL-AN3-R Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel DTC143TL-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING CE3T For SOT -23/SOT-323 Package C5T For SOT-523 Package www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1of 3 QW-R206-059,D DTC143T PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO IC NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise specified ) RATINGS UNIT 50 V 50 V 5 V 100 mA SOT-523 150 mW Collector Power Dissipation PC SOT-23/SOT-323 200 mW Junction Temperature TJ +150 Storage Temperature TSTG -55~+150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency * Transition frequency of the device. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE R1 fT TEST CONDITIONS IC =50A IC =1mA IE =50A VCB=50V VEB =4V IC =5mA, IB=0.25mA VCE=5V, IC=1mA VCE =10V, IE =5mA, f=100MHz * MIN 50 50 5 TYP MAX UNIT V V V 0.5 A 0.5 A 0.3 V 600 6.11 k MHz 100 3.29 250 4.7 250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R206-059,D DTC143T TYPICAL CHARACTERISTICS DC Current Gain vs. Collector Current 1000 500 DC Current Gain, hFE 200 100 50 20 10 5 2 1 0.1 NPN SILICON TRANSISTOR VCE =5V Collector Saturation Volt age, VCE(SAT) 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 0.1 Collector-Emitter Saturation Voltage vs. Collector Current Ic/IB=20 Ta=100 25 -40 Ta=100 25 -40 0.2 0.5 1 2 5 10 20 50 100 0. 2 0.5 1 2 5 10 20 50 100 Collector Current, Ic (mA) Collector Current, Ic (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-059,D |
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